发明公开
- 专利标题: Exposure method with electron beam exposure apparatus
- 专利标题(中): 电子束曝光装置的曝光方法
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申请号: EP82105024申请日: 1982-06-08
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公开(公告)号: EP0066883A3公开(公告)日: 1985-05-15
- 发明人: Matsuda, Tadahito , Okubo, Tsuneo , Ozasa, Susumu , Saitou, Norio , Yoda, Haruo
- 申请人: Hitachi, Ltd. , Nippon Telegraph and Telephone Public Corporation
- 专利权人: Hitachi, Ltd.,Nippon Telegraph and Telephone Public Corporation
- 当前专利权人: Hitachi, Ltd.,Nippon Telegraph and Telephone Public Corporation
- 优先权: JP8818581 19810610
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
An exposure method with an electron beam exposure apparatus in which an electron beam is emitted onto a substrate (1) such as a silicon wafer on which an electron-beam sensitive resist is coated, thereby directly forming or writing patterns. A substrate (1) having thereon a number of chips (2) are divided into blocks (3), marks (4) are provided on each of the blocks (3), the positions of the marks (4) are detected and the writing exposure positions of the chips (2) within each block (3) are modified on the basis of the detection results. According to this invention, efficient writing exposure can be made with high accuracy.
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