发明公开
- 专利标题： Method of manufacturing semiconductor devices comprising isolating regions
- 专利标题（中）： 制造隔离区域的半导体器件的制造方法
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申请号： EP82302975申请日： 1982-06-09
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公开(公告)号： EP0068679A3公开(公告)日： 1984-07-25
- 发明人: Tamaki, Yoichi , Kure, Tokuo , Shiba, Takeo , Higuchi, Hisayuki
- 申请人： Hitachi, Ltd.
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 优先权： JP8815081 19810610
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/31
摘要：
After filling isolation grooves (12) with a filling material (15), this filling material is etched by the use of a double-layer film (16, 17) which is made of substances different from each other. Side etching of the lower film (16) of the double-layer film and etching of the filling material (15) are alternately performed in such a manner that each etching is carried out two or more times. Thus, the upper surface of the filling material contained in each groove can be flattened, to improve the reliability of wiring formed over the upper surface.
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