发明公开
- 专利标题： Semiconductor integrated-circuit apparatus
- 专利标题（中）： 半导体集成电路设备
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申请号： EP83303805.2申请日： 1983-06-30
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公开(公告)号： EP0098173A2公开(公告)日： 1984-01-11
- 发明人: Sugiyama, Eiji , Saito, Toshiharu , Natsume, Mitsuaki
- 申请人： FUJITSU LIMITED
- 申请人地址： 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： 1015, Kamikodanaka, Nakahara-ku Kawasaki-shi, Kanagawa 211 JP
- 代理机构： Skone James, Robert Edmund
- 优先权： JP112778/82 19820630; JP114241/82 19820701; JP233774/82 19821229; JP230288/82 19821229
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H03K19/086
摘要：
A semiconductor integrated-circuit apparatus includes an electro-conductive layer (64, Figure 19) formed on a substrate, a plurality of internal cells (INC) formed on the electro-conductive layer, a plurality of bonding pads (BP) arranged around the internal cells, and a plurality of bias cells (SBC) which are common to the plurality of internal cells and which generate a predetermined voltage. A plurality of bias buffer circuits (INB) supply the predetermined voltage generated in the bias cells to the internal cells.
公开/授权文献
- EP0098173B1 Semiconductor integrated-circuit apparatus 公开/授权日：1990-04-11
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