发明公开
EP0134716A1 Process for high temperature drive-in diffusion of dopants into semiconductor wafers
失效
一种用于在高温下在半导体晶片的掺杂物的驱动方法。
- 专利标题： Process for high temperature drive-in diffusion of dopants into semiconductor wafers
- 专利标题（中）： 一种用于在高温下在半导体晶片的掺杂物的驱动方法。
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申请号： EP84305792.8申请日： 1984-08-23
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公开(公告)号： EP0134716A1公开(公告)日： 1985-03-20
- 发明人: Russo, Carl Joseph
- 申请人： VARIAN ASSOCIATES, INC.
- 申请人地址： 611 Hansen Way Palo Alto, CA 94303 US
- 专利权人： VARIAN ASSOCIATES, INC.
- 当前专利权人： VARIAN ASSOCIATES, INC.
- 当前专利权人地址： 611 Hansen Way Palo Alto, CA 94303 US
- 代理机构： Cline, Roger Ledlie
- 优先权： US527140 19830829
- 主分类号： C30B31/12
- IPC分类号： C30B31/12
摘要：
A process for high temperature, rapid drive-in diffusion employs a planar blackbody source placed in parallel alignment with a semiconductor wafer in a vacuum processing chamber. The wafer is rapidly heated, preferably to a temperature in the range of 1100°C to 1300°C and primarily by radiation which promotes uniformity. Typical diffusions are completed in less than one minute. In order to control diffusion distance at elevated temperatures, the process time and source temperature are carefully controlled, and the peak wafer temperature is monitored.
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