A method of integrated circuit fabrication and the resulting integrated circuit wherein areas (8) of recessed oxide isolation surround active device regions (3) and the bird's head (101) and bird's beak formed during formation of the recessed oxide regions (8) is eliminated by forming a deep dielectric isolation trench (9) directly over the bird's head (101). A very thin epitaxial layer (10) can be provided over the active device regions (3) of the integrated circuit. Preferably, the thin epitaxial layer (10) is selectively grown only over active device regions (3). Also, in later manufacturing steps, metal (31) is deposited in direct registration with contact areas.