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EP0139366A1 Method of manufacturing a soldi-state image pickup device 失效
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Method of manufacturing a soldi-state image pickup device
摘要:
When a "two-level" solid state image pickup device is manufactured, part of a first metallic electrode (28a) electrically connected to a signal storage region (24b) is made to project to the highest position above a substrate on which it is formed. A coating of an organic insulating film (29) is then applied to produce a flat surface. The entire surface of the organic film is then etched to expose the projections (A) of the first metallic electrode (28a) and a second metallic electrode (28b) constituting a pixel electrode is connected to the first electrode (28a) at the exposed portion thereof.
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