发明公开
EP0148357A1 A metal organic chemical vapour deposition process for depositing silicon doped intermetallic semiconductor compounds
失效
通过使用金属 - 有机蒸气硅掺杂的金属间化合物半导体的化学沉积的方法。
- 专利标题： A metal organic chemical vapour deposition process for depositing silicon doped intermetallic semiconductor compounds
- 专利标题（中）： 通过使用金属 - 有机蒸气硅掺杂的金属间化合物半导体的化学沉积的方法。
-
申请号： EP84113329.1申请日： 1984-11-06
-
公开(公告)号： EP0148357A1公开(公告)日： 1985-07-17
- 发明人: Kuech, Thomas Francis , Meyerson, Bernard Steele
- 申请人： International Business Machines Corporation
- 申请人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Hobbs, Francis John (GB)
- 优先权： US559583 19831208
- 主分类号： C30B25/02
- IPC分类号： C30B25/02 ; H01L21/205
摘要：
@ A gaseous hydride based silicon compound having a molecule containing at least two silicon atoms, such as Si 2 H 6 to Si 5 H 12 , is used as a source of silicon in a metal organic chemical vapour deposition process for epitaxially depositing a silicon doped intermetallic semiconductor compound such as GaAs or GaAlAs.
公开/授权文献
信息查询
IPC分类:
