发明公开
- 专利标题: Magnetic transducer using magnetoresistance effect
- 专利标题(中): 磁传感器使用磁阻效应
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申请号: EP85100825申请日: 1985-01-28
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公开(公告)号: EP0152000A3公开(公告)日: 1986-06-18
- 发明人: Kamo, Yoshihisa , Sato, Naoki , Kitada, Masahiro , Takeura, Tooru
- 申请人: HITACHI, LTD.
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 优先权: JP1192084 19840127; JP12519084 19840620; JP17492884 19840824; JP21251284 19841012
- 主分类号: G01R33/06
- IPC分类号: G01R33/06
摘要:
Disclosed is a magnetic transducer using a magnetoresi- ' stance effect, comprising a magnetoresistive film (1), a hard magnetic film (3) for applying a transverse biasing magnetic field thereto, and a conductive film (2) through which current for applying the transverse biasing magnetic field to the magnetoresistive film (1) flows. The conductive film may be either in electrical contact with or in electrical insulation from the magnetoresistive film. In this magnetic transducer, even when the heights of the respective constituents have changed, the transverse biasing magnetic field to be applied does not change considerably, and an optimum bias field strength is readily attained.
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