发明公开
EP0162660A2 A compound resonator type semiconductor laser device
失效
Halbleiterlaservorrichtung mit zusammengesetzter Resonatorstruktur。
- 专利标题： A compound resonator type semiconductor laser device
- 专利标题（中）： Halbleiterlaservorrichtung mit zusammengesetzter Resonatorstruktur。
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申请号： EP85303412.2申请日： 1985-05-15
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公开(公告)号： EP0162660A2公开(公告)日： 1985-11-27
- 发明人: Yamamoto, Saburo , Hayashi, Hiroshi , Miyauchi, Nobuyuki , Morimoto, Taiji , Maei, Shigeki
- 申请人： SHARP KABUSHIKI KAISHA
- 申请人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545 JP
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545 JP
- 代理机构： Billington, Lawrence Emlyn
- 优先权： JP99319/84 19840516; JP105373/84 19840523
- 主分类号： H01S3/19
- IPC分类号： H01S3/19 ; H01S3/082
摘要：
A compound resonator type semiconductor laser device comprises a multiple-layered crystal structure having a first laser operation area which contains a resonator for laser oscillation and a second laser operation area which contains a resonator a facet of which is shared with that of the resonator in the first laser operation area; and an electric current feeder for injecting a current into said multiple-layered crystal structure, wherein said facet of the resonator in the first laser operation area, which is shared with the facet of the resonator in the second laser operation area, is covered with a protective film to attain a high reflectivity therein, the other facet of the resonator in the first laser operation area is covered with a protective film to attain a low reflectivity therein and the other facet of the resonator in the second laser operation area is covered with a protective film to attain a high reflectivity therein.
公开/授权文献
- EP0162660B1 A compound resonator type semiconductor laser device 公开/授权日：1989-07-26
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