A non-volatile storage cell uses two different areas (28A, 28B) for electron injection, allowing direct overwriting of previously stored data without an intervening erase cycle. A floating gate FET has duel programming gates (PG1, PG2) disposed on its floating gate (22). Each programming gate (PG1, PG2) includes n layer (28A, 28B) of dual electron injector structure (DEIS) and a polysilicon electrode (30, 32). When writing a "0", one of the programming gates PG1, PG2) removes charge from the floating gate (22). When writing "1", the other programming gate injects charge into the floating gate (22). This charge transfer does not take place if the previously stored logic state and the logic state to be written in are identical.