发明公开
- 专利标题： A method of forming a semiconductor device using a mask
- 专利标题（中）： 使用掩模形成半导体器件的方法使用掩模形成半导体器件的方法
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申请号： EP85107231申请日： 1985-06-13
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公开(公告)号： EP0179196A3公开(公告)日： 1987-07-22
- 发明人: Fang, Frank Fu , Grossman, Bertrand M. , Hwang, Wei
- 申请人： International Business Machines Corporation
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 优先权： US623810 19840622
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/28 ; H01L21/265
摘要：
A semiconductor device, particularly an ultra-short gate MOSFET, is formed by depositing a mask (6) at a low angle with respect to a planar surface and then performing an angular conductivity conversion operation, such as ion implantation, so that the converted region extends (9) partially under the mask. The mask is then removed and a gate electrode (12) is deposited in its place, the gate being smaller than the channel length (11) from the source (7) to the point (9) where the conversion extended under the mask. Straggle location change is accommodated by arranging that the mask has a dimension along a line parallel to the planar surface which is greater than the desired channel length.
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