发明公开
- 专利标题: Dual Array memory.
- 专利标题(中): 双存储阵列。
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申请号: EP86304774申请日: 1986-06-20
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公开(公告)号: EP0206784A2公开(公告)日: 1986-12-30
- 发明人: LAM HENG-MUN , KESWICK PAUL D
- 申请人: ADVANCED MICRO DEVICES INC
- 专利权人: ADVANCED MICRO DEVICES INC
- 当前专利权人: ADVANCED MICRO DEVICES INC
- 优先权: US74747585 1985-06-21
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G06F12/04 ; G11C11/00
摘要:
A high access speed memory for the internal storage of data and the addressable input/output transfer of data thereto, the memory comprising means for the dynamic storage of data, means for the static storage of data, and means for transferring data between the dynamic storage means and the static storage means. The intimate interfacing of the static and dynamic memories provides a high access speed pathway to the dynamically stored data while impacting minimally on sense amplification timing and the use of a redundant dynamic memory scheme.
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