A new semiconductive material includes a suitable polymer or blend of polymers and a carbon black material in an amount of 4% to 25% based on the total weight of the semiconductive material, having a relatively low reticulate structure; and being essen­tially non-chemically surface-treated (having essenti­ally a non-oxidized surface) such that the pH of the carbon black is at least 4.0, and generally about 5.0 to 8.5. These non-surface treated carbon blacks gener­ally have a dry volatile content of about 3.0 or less and usually 2.5 or less. The particular carbon blacks suitable for the semiconductive materials of the inven­tion are essentially non-surface treated, have a mid­range value for dry volume resistivity, and have a nitrogen surface area A in m²/g greater than or equal to 1.75 x + e x/37 where x is the DBP absorption of the carbon black in cm³/100 grams. Such carbon blacks decrease the annealing times needed to less than about 3 minutes, and generally in the time period of less than 1 minute.