发明公开
EP0239094A2 Semiconductor strain gauge bridge circuit
失效
Brückenschaltkreismit Halbleiterdehnungsmessstreifen。
- 专利标题： Semiconductor strain gauge bridge circuit
- 专利标题（中）： Brückenschaltkreismit Halbleiterdehnungsmessstreifen。
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申请号： EP87104402.0申请日： 1987-03-25
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公开(公告)号： EP0239094A2公开(公告)日： 1987-09-30
- 发明人: Miyazaki, Atsushi , Kobayashi, Ryoichi
- 申请人： HITACHI, LTD.
- 申请人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 101 JP
- 专利权人： HITACHI, LTD.
- 当前专利权人： HITACHI, LTD.
- 当前专利权人地址： 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 101 JP
- 代理机构： Beetz & Partner Patentanwälte
- 优先权： JP65713/86 19860326
- 主分类号： G01L9/06
- IPC分类号： G01L9/06 ; G01L1/22
摘要：
A semiconductor strain gauge bridge circuit device is disclosed to include a bridge circuit (2) of semiconductor strain gauges, a first zero-point temperature compensation circuit (3) connected to one (b) of a pair of output terminals of the bridge circuit and including a voltage-dividing resistor circuit (R 21 , R z2 ) generating a voltage substantially equal to a potential appearing at the one output terminal at a predetermined temperature, and a second zero-point temperature compensation circuit (4) connected to the other (d) of the output terminals and including a resistive element (R ZTH ) having a temperature characteristic similar to that of the semiconductor strain gauges.
公开/授权文献
- EP0239094B1 Semiconductor strain gauge bridge circuit 公开/授权日：1992-03-04
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