发明公开
- 专利标题: Semiconductor strain gauge bridge circuit
- 专利标题(中): 半导体应变电阻桥电路
-
申请号: EP87104402.0申请日: 1987-03-25
-
公开(公告)号: EP0239094A3公开(公告)日: 1989-06-14
- 发明人: Miyazaki, Atsushi , Kobayashi, Ryoichi
- 申请人: HITACHI, LTD.
- 申请人地址: 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 101 JP
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 当前专利权人地址: 6, Kanda Surugadai 4-chome Chiyoda-ku, Tokyo 101 JP
- 代理机构: Beetz & Partner Patentanwälte
- 优先权: JP65713/86 19860326
- 主分类号: G01L9/06
- IPC分类号: G01L9/06 ; G01L1/22
摘要:
A semiconductor strain gauge bridge circuit device is disclosed to include a bridge circuit (2) of semiconductor strain gauges, a first zero-point temperature compensation circuit (3) connected to one (b) of a pair of output terminals of the bridge circuit and including a voltage-dividing resistor circuit (R 21 , R z2 ) generating a voltage substantially equal to a potential appearing at the one output terminal at a predetermined temperature, and a second zero-point temperature compensation circuit (4) connected to the other (d) of the output terminals and including a resistive element (R ZTH ) having a temperature characteristic similar to that of the semiconductor strain gauges.
公开/授权文献
- EP0239094B1 Semiconductor strain gauge bridge circuit 公开/授权日:1992-03-04
信息查询