发明授权
- 专利标题： TTL COMPATIBLE CMOS INPUT CIRCUIT
- 专利标题（中）： TTL兼容CMOS输入电路
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申请号： EP88900310.9申请日： 1987-11-30
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公开(公告)号： EP0296193B1公开(公告)日： 1992-11-19
- 发明人: DUNN, William, C.
- 申请人： SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.)
- 申请人地址： 1310 Electronics Drive Carrollton, TX 75006 US
- 专利权人： SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.)
- 当前专利权人： SGS-THOMSON MICROELECTRONICS, INC. (a Delaware corp.)
- 当前专利权人地址： 1310 Electronics Drive Carrollton, TX 75006 US
- 代理机构： Driver, Virginia Rozanne
- 优先权： US192 19870102
- 国际公布： WO8805228 19880714
- 主分类号： H03K19/0175
- IPC分类号： H03K19/0175 ; H03K17/687 ; H03K19/094 ; G05F3/16
摘要：
A TTL compatible CMOS input circuit comprising a series of current mirror circuits (A, B, C) arranged so that the input transistor (Q4) is used to discharge the capacitive load (34) and one of a pair of transistors (Q4) in one of the mirror circuits (C) provides charging current for the load (34). Only one of the charging (Q3) and discharging (Q4) transistor switches is "on" at any one time, thus reducing circuit power consumption and reducing required device sizes. The input switching level is also independent of the supply voltage (18).
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