发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及它们的制备方法。
-
申请号： EP88111399.7申请日： 1988-07-15
-
公开(公告)号： EP0299505B1公开(公告)日： 1995-09-13
- 发明人: Okumura, Katsuya
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构： Lehn, Werner, Dipl.-Ing.
- 优先权： JP177887/87 19870716
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L29/10 ; H01L29/78
摘要：
A semiconductor device comprising three recessed portions (11, 12, 13; 32, 33, 34) formed at a very small pitch on the surface of a semiconductor substrate, remaining regions (14, 15; 35, 36) formed between these recessed portions as impurity diffused regions serving as the source and the drain, respectively, and a conductive region as a gate electrode formed through an insulating film within the central recessed portion (12; 33), and a method of manufacturing such a semiconductor device are disclosed. with this device, its gate length can be made shorter than that in the prior art and the junction leakage is reduced, resulting in miniaturization and an improvement in the characteristics.
公开/授权文献
- EP0299505A3 Semiconductor device and manufacturing method thereof 公开/授权日：1990-01-24
信息查询
IPC分类:
