发明公开
- 专利标题： Compound semiconductor material and semiconductor element using the same and method of manufacturing the semiconductor element
- 专利标题（中）： 使用其的化合物半导体材料和半导体元件以及制造半导体元件的方法
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申请号： EP89310004.0申请日： 1989-09-29
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公开(公告)号： EP0377940A3公开(公告)日： 1991-05-29
- 发明人: Ohba, Yasuo Intellectual Property Division , Izumiya, Toshihide Intellectual Property Division , Hatano, Ako Intellectual Property Division
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构： Freed, Arthur Woolf
- 优先权： JP6222/89 19890113; JP110501/89 19890428
- 主分类号： H01L29/201
- IPC分类号： H01L29/201 ; H01L33/00 ; H01S3/19
摘要：
A compound semiconductor material includes Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) containing B and P and having a zinc blend type crystal structure. A compound semiconductor element includes Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer having a zinc blend type crystal structure. A method of manufacturing a compound semiconductor element includes the step of sequentially forming a BP layer and a Ga x Aℓ 1-x N (wherein 0 ≦ x ≦ 1) layer on a substrate so as to form a heterojunction by using a metal organic chemical vapor deposition apparatus having a plurality of reaction regions, and moving the substrate between the plurality of reaction regions.
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