发明公开
- 专利标题： Method for forming polycrystalline silicon contacts
- 专利标题（中）： 形成多晶硅接触的方法
-
申请号： EP90305951.7申请日： 1990-05-31
-
公开(公告)号： EP0404372A3公开(公告)日： 1991-03-06
- 发明人: Spinner, Charles Ralph , Chen, Fusen E. , Liou, Fu-Tai
- 申请人： SGS-THOMSON MICROELECTRONICS, INC.
- 申请人地址： 1310 Electronics Drive Carrollton Texas 75006 US
- 专利权人： SGS-THOMSON MICROELECTRONICS, INC.
- 当前专利权人： SGS-THOMSON MICROELECTRONICS, INC.
- 当前专利权人地址： 1310 Electronics Drive Carrollton Texas 75006 US
- 代理机构： Palmer, Roger
- 优先权： US370615 19890623
- 主分类号： H01L21/283
- IPC分类号： H01L21/283 ; H01L21/768
摘要：
A method for fabricating integrated circuits is used to improve contacts between polycrystalline interconnect and underlying polycrystalline or monocrystalline silicon regions. After contact openings are formed, a layer of titanium (48) is deposited over the integrated circuit. The titanium is reacted in nitrogen to form a silicide layer only in the openings. Titanium nitride and unreacted titanium are then removed, and a layer of polycrystalline silicon (56) deposited and patterned. The silicide (50, 51, 52) layer between the polycrystalline interconnect and the underlying silicon ensures that a high quality contact is formed.
公开/授权文献
- EP0404372B1 Method for forming polycrystalline silicon contacts 公开/授权日：1996-09-11
信息查询
IPC分类:
