A semiconductor device of high integration density and low power consumption prevents the influence of the amplitude of an input signal upon the amplitude of an output signal in such a way that a preceding circuit (C) and a succeeding circuit (D) are endowed with different reference voltages. In an aspect of performance, the semiconductor device is constructed of a circuit which includes field effect transistors (25, 27, 29), and which operates with reference to one or more voltages (B1), at least one of the reference voltages having a voltage value different from a reference operating voltage (VA) of a preceding circuit (C) which controls the above circuit. In another aspect of performance, first switching means is interposed between a first reference voltage and can input node of a driver circuit, and second switching means is interposed between an output of a preceding circuit and the input of the driver circuit, so that when an output signal of the preceding circuit is at a high level, the second switch is turned "on" while the first switch is turned "off" thereby to produce a still higher potential, and that when the output signal of the preceding circuit is at a low level, the second switch is turned "off" while the first switch is turned "on". The semiconductor device is suited to those circuits of a high-density DRAM and SRAM which use voltage limiters.