发明授权
- 专利标题： Method for fabricating selfstabilized semiconductor gratings
- 专利标题（中）： 一种用于自稳定半导体条的制备方法。
-
申请号： EP90313661.2申请日： 1990-12-14
-
公开(公告)号： EP0444350B1公开(公告)日： 1995-07-05
- 发明人: Strege, Keith Elden
- 申请人： AT&T Corp.
- 申请人地址： 32 Avenue of the Americas New York, NY 10013-2412 US
- 专利权人： AT&T Corp.
- 当前专利权人： AT&T Corp.
- 当前专利权人地址： 32 Avenue of the Americas New York, NY 10013-2412 US
- 代理机构： Watts, Christopher Malcolm Kelway, Dr.
- 优先权： US486577 19900228
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; G02B5/18 ; H01S3/085 ; H01S3/19
摘要：
A quaternary semiconductor diffraction grating 21, such as an InGaAsP grating suitable for a DFB laser, is embedded in a semiconductor laser 32, such as InP. In one embodiment, the grating is fabricated by (1) forming on the top surface of an InP layer 10 an epitaxial layer of InGaAsP 11 coated with an epitaxial layer of InP 12 having a thickness which is greater than that of the InGaAsP layer; (2) forming a pattern of apertures 20 penetrating through the layers of InP and InGaAsP; and (3) heating the layers to a temperature sufficient to cause a mass transport of InP from the InP epitaxial layer 22, the thickness of the InP layer being sufficient to bury the entire surface of the InGaAsP layer 21 with InP.
公开/授权文献
- EP0444350A3 Method for fabricating selfstabilized semiconductor gratings 公开/授权日：1992-01-29
信息查询
IPC分类:
