发明公开
EP0513894A2 Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor
失效
一种用于与包括具有这样的电容器的铁电Dieletrikum和半导体器件的电容器的制造半导体器件的工艺。
- 专利标题： Method of manufacturing a semiconductor device comprising a capacitor with a ferroelectric dielectric, and semiconductor device comprising such a capacitor
- 专利标题（中）： 一种用于与包括具有这样的电容器的铁电Dieletrikum和半导体器件的电容器的制造半导体器件的工艺。
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申请号： EP92201215.8申请日： 1992-05-04
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公开(公告)号： EP0513894A2公开(公告)日： 1992-11-19
- 发明人: Wolters, Robertus Adrianus Maria , Larsen, Poul Kjaerby , Ulenaers, Mathieu Joseph Emanuel
- 申请人： Philips Electronics N.V.
- 申请人地址： Groenewoudseweg 1 5621 BA Eindhoven NL
- 专利权人： Philips Electronics N.V.
- 当前专利权人： Philips Electronics N.V.
- 当前专利权人地址： Groenewoudseweg 1 5621 BA Eindhoven NL
- 代理机构： Veerman, Jan Willem
- 优先权： EP91201104 19910508
- 主分类号： H01L29/92
- IPC分类号： H01L29/92
摘要：
A method of manufacturing a semiconductor device whereby a capacitor (2) is provided on a surface (10) of a semiconductor body (3) with a semiconductor element (1) in that a lower electrode (11), an oxidic ferroelectric dielectric (12) and an upper electrode (13) are provided in that order, the upper electrode not covering an edge of the dielectric, after which an insulating layer (14) with superimposed metal conductor tracks is provided. According to the invention, the edge of the dielectric (12) not covered by the upper electrode (13) is coated with a coating layer (14, 20, or 30) practically imperviable to hydrogen, after which the device is heated in a hydrogen-containing atmosphere. Heating in a hydrogen atmosphere neutralizes dangling bonds which arise during deposition of the conductor tracks on the insulating layer, while the coating layer protects the dielectric from attacks by hydrogen. The semiconductor device then has a shorter access time.
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