发明授权
- 专利标题： Method of making a thin film insulating layer with Bi-W-Oxygen
- 专利标题（中）： 一种用于制造具有双W-氧的薄膜绝缘层的方法
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申请号： EP92109241.7申请日： 1992-06-02
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公开(公告)号： EP0517148B1公开(公告)日： 1996-03-20
- 发明人: Ichikawa, Yo , Setsune, Kentaro , Adachi, Hideaki
- 申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 申请人地址： 1006, Oaza Kadoma Kadoma-shi, Osaka-fu, 571 JP
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： 1006, Oaza Kadoma Kadoma-shi, Osaka-fu, 571 JP
- 代理机构： Eisenführ, Speiser & Partner
- 优先权： JP132736/91 19910604; JP344519/91 19911226; JP344520/91 19911226
- 主分类号： H01B12/00
- IPC分类号： H01B12/00 ; H01L39/24 ; H01L39/12
摘要：
Bi-Ti-O or Bi-W-O thin film of stable crystal phase is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A layered structure of Bi-Sr-Ca-Cu-O thin films and Bi-Ti-O or Bi-W-O thin films is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A stable superconductor thin film of high superconducting transition temperature is manufactured reproducibly by layering alternately a layered oxide superconductor thin film of Tl-Ba-Ca-Cu-O system and a Bi-W-O insulator thin film.
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