A field programmable array of application circuitry (C1,C2,...) is programmed (or reprogrammed) by first applying application circuitry power supply (AV dd =5v) to the application circuitry, and then applying a binary digital data signal (D0/D1) through the source-drain path of an access transistor (N3) in its on condition to the SRAM that controls the on/off condition of its associated controlled pass transistor (N4). This SRAM is one of a row-column array of similar SRAMs, and the access transistors for all SRAMs on the same row are similarly supplied with data signals through access transistors. The pass transistor determines whether application circuitry interconnection points (A1,A2), are going to be connected after the programming (or reprogramming) is terminated. While the data signal (D0/D1) is applied to the SRAM, and the power supply (PV DD ) for the SRAM is maintained at an intermediate level (3v) below the level of the application circuitry power supply voltage (AV dd =5v) and below the high binary level (D1), a row-select pulse (S) is applied to a control terminal of the access transistor, as well as to all control terminals of access transistors for accessing all other SRAMs on the same row. The row-select pulse (S) is then terminated and the SRAMs on other rows (if need be) are similarly written (or re-written). Then the power supply (PV DD ) for the SRAMs is increased to a level (PV DD =6v) advantageously higher, by a threshold of the pass transistor (N4), than that of the application circuitry (AV dd =5v), to reduce both voltage drops and power losses in pass transistors.