发明授权
- 专利标题: A METHOD OF MAKING A MULTILAYER THIN FILM STRUCTURE
- 专利标题(中): 薄膜多层结构的制造方法。
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申请号: EP91904608.6申请日: 1991-02-01
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公开(公告)号: EP0557278B1公开(公告)日: 1994-12-07
- 发明人: CHANG, Kenneth , CZORNYJ, George , FAROOQ, Mukta, Shaji , KUMAR, Ananda, Hosakere , PITTLER, Marvin, S. , STEIMEL, Heinz, Otto
- 申请人: International Business Machines Corporation
- 申请人地址: Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构: Schuffenecker, Thierry
- 优先权: US613196 19901115
- 国际公布: WO9209102 19920529
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; H01L23/538
摘要:
A method of making a multilayer thin film structure on the surface of a dielectric substrate which includes the steps of: a) forming a multilayer thin film structure including the steps of: applying a first layer of dielectric polymeric material on the surface of a dielectric substrate, applying a second layer of dielectric polymeric material over the first layer of polymeric material wherein the second polymeric material is photosensitive, imagewise exposing and developing the second polymeric material to form a feature therein, the second layer feature in communication with at least one feature formed in the first polymeric material; and b) filling the features in the entire multilayer structure simultaneously with conductive material. Preferably, the first layer feature is a via and the second layer feature is a capture pad or wiring channel. Also disclosed is a multilayer thin film structure made by this method.
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