发明公开
- 专利标题: Semiconductor memory device with a circuit
- 专利标题(中): 具有电路的半导体存储器件
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申请号: EP93107367.0申请日: 1993-05-06
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公开(公告)号: EP0569014A3公开(公告)日: 1997-04-09
- 发明人: Kozuka, Eiji , Miyawaki, Naokazu
- 申请人: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MICRO-ELECTRONICS CORPORATION
- 申请人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 专利权人: KABUSHIKI KAISHA TOSHIBA,TOSHIBA MICRO-ELECTRONICS CORPORATION
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA,TOSHIBA MICRO-ELECTRONICS CORPORATION
- 当前专利权人地址: 72, Horikawa-cho, Saiwai-ku Kawasaki-shi, Kanagawa-ken 210 JP
- 代理机构: Lehn, Werner, Dipl.-Ing.
- 优先权: JP113756/92 19920506
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
A semiconductor memory device has a plurality of memory cell arrays (12a,12b); input and output sections (11a, 11b) each provided so as to correspond to each of the memory cell arrays; and an allocating section (17) provided between the memory cell arrays and the input and output sections, for allocating one of the memory cell arrays to one of the input output sections in ordinary mode, and a plurality of the memory cell arrays to one of the input and output sections in test mode. In the operation test mode, since only a part of the input and output sections are used, it is possible to decrease the number of chips connected to the I/O pins (whose maximum number is limited) of the tester so as to be testable simultaneously, so that the number of chips whose operation tests can be implemented simultaneously can be increased, thus reducing the time required for the operation test of the memory device as a whole.
公开/授权文献
- EP0569014B1 Semiconductor memory device with a test circuit 公开/授权日:2000-02-16
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