发明公开
- 专利标题： High resolution etching mask
- 专利标题（中）： Ätzmaskevon hoherAuflösung。
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申请号： EP93108663.1申请日： 1993-05-28
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公开(公告)号： EP0572943A1公开(公告)日： 1993-12-08
- 发明人: Kenney, Donald McAlpine
- 申请人： International Business Machines Corporation
- 申请人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Schäfer, Wolfgang, Dipl.-Ing.
- 优先权： US892081 19920602
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/82 ; H01L27/108 ; H01L21/033
摘要：
A method is provided to enable the formation of sub-lithographic relief images to increase the surface area of semiconductor structures for use in the capacitors of DRAM cells. The method includes the steps of forming in situ a non-planar region (12) having a relief pattern (14) comprising sub-micron sized elements and the transferring the relief pattern (14) into a masking layer (16) in order to selectively etch a substrate (10) to form relatively deep trenches (20) having a density equal to the relief pattern (14). Polysilicon and porous silicon can be used to form the sub-micron relief pattern.
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