发明公开
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: EP92907111申请日: 1992-03-21
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公开(公告)号: EP0578821A4公开(公告)日: 1996-01-10
- 发明人: SHIBATA TADASHI , OHMI TADAHIRO
- 申请人: SHIBATA TADASHI , OHMI TADAHIRO
- 专利权人: SHIBATA TADASHI,OHMI TADAHIRO
- 当前专利权人: SHIBATA TADASHI,OHMI TADAHIRO
- 优先权: JP8315291 1991-03-21
- 主分类号: G06F7/49
- IPC分类号: G06F7/49 ; G06F7/50 ; G06F7/501 ; G06N3/063 ; G11C11/56 ; G11C16/04 ; G11C27/00 ; H01L29/788 ; H03K19/0944 ; G06G7/60 ; H01L29/66
摘要:
A semiconductor device by which a circuit having the same functions as those of the conventional circuits is realized with a very small number of elements, and complex logical functions can be designed simply, and further, its layout is also possible. A semiconductor device made up of at least one neuron MOS transistor having a gate electrode provided in a potentially floating state in a portion for isolating a source and drain region via a first insulation film, and plural control electrodes which are capacitively coupled to the floating gate electrode via a second insulation film, is characterized in that the first signal is inputted to a first control gate elctrode of the first neuron MOS transistor, the first signal is inputted to a first inverter comprising one or more stages, and the output of the first inverter is inputted to a second control gate electrode which is one of the plural control gate electrodes other than the first control gate electrode.
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