发明公开
- 专利标题： Improvements in or relating to transistor switches
- 专利标题（中）： Transistorschalter。
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申请号： EP94305830.5申请日： 1994-08-05
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公开(公告)号： EP0637847A2公开(公告)日： 1995-02-08
- 发明人: Maytum,Mick , Garnham,Dave
- 申请人： TEXAS INSTRUMENTS INCORPORATED , TEXAS INSTRUMENTS LIMITED
- 申请人地址： 13500 North Central Expressway Dallas Texas 75265 US
- 专利权人： TEXAS INSTRUMENTS INCORPORATED,TEXAS INSTRUMENTS LIMITED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED,TEXAS INSTRUMENTS LIMITED
- 当前专利权人地址： 13500 North Central Expressway Dallas Texas 75265 US
- 代理机构： Nettleton, John Victor
- 优先权： GB9316368 19930806
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L29/861 ; H01L27/07
摘要：
An electronic switch (80) having a transistor (T) and a diode (D) formed on a substrate (82) is provided. The electronic switch (80) includes a commong transistor collector and diode cathode region (81) of a first conductivity type formed in the substrate (82). The switch (80) also includes a transistor base region (83) of a second conductivity type formed in a first section of the collector region (81) and a transistor emitter region (84) of the first conductivity type formed in a section of the base region (80) includes a diode anode region (85) formed of the second conductivity type and in a second section of the collector region (81). At least a portion of the anode region (85) is selectively doped with a metallic dopant to provide centers for charge carrier recombination so as to increase the recovery time of the diode (D).
公开/授权文献
- EP0637847A3 Improvements in or relating to transistor switches 公开/授权日：1995-07-05
信息查询
IPC分类:
