发明公开
EP0666933A1 EINRICHTUNG ZUM PLASMAGESTÜTZTEN ELEKTRONENSTRAHL-HOCHRATEBEDAMPFEN
失效
DEVICE等离子辅助电子HOCHRATEBEDAMPFEN。
- 专利标题: EINRICHTUNG ZUM PLASMAGESTÜTZTEN ELEKTRONENSTRAHL-HOCHRATEBEDAMPFEN
- 专利标题(英): Device for plasma-supported electron beam high-rate vapour deposiition.
- 专利标题(中): DEVICE等离子辅助电子HOCHRATEBEDAMPFEN。
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申请号: EP93918893.0申请日: 1993-08-18
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公开(公告)号: EP0666933A1公开(公告)日: 1995-08-16
- 发明人: NEUMANN, Manfred , SCHILLER, Siegfried , MORGNER, Henry
- 申请人: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
- 申请人地址: Leonrodstrasse 54 D-80636 München DE
- 专利权人: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
- 当前专利权人: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
- 当前专利权人地址: Leonrodstrasse 54 D-80636 München DE
- 优先权: DE19924235199 19921019
- 国际公布: WO1994009176 19940428
- 主分类号: C23C14
- IPC分类号: C23C14 ; H01J37
摘要:
It is known that improved coating properties can be obtained by plasma action in vacuum deposition, especially by vaporisation. Substantially higher coating rates can be attained in vapour deposition, but, with high plasma densities, they result in excessive scattering of the electron beam and reduce the power density. According to the invention, a plasma source, preferably a hollow cathode arc source, is arranged in the immediate vicinity of the substrate. Between the evaporator and the substrate there is a device for generating a magnetic field so that the region of high plasma density is separated from the evaporator and the electron beam by the magnetic field. The boundary field lines of this magnetic field run along an arc curving with respect to the substrate.
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