发明公开
- 专利标题： Extended drain resurf lateral DMOS devices
- 专利标题（中）： 废水 - DMOS-Bauelemente mit erweitertem排水。
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申请号： EP95105403.0申请日： 1995-04-10
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公开(公告)号： EP0676799A2公开(公告)日： 1995-10-11
- 发明人: Mei, Chia-Cu P. , Malhi, Satwinder
- 申请人： TEXAS INSTRUMENTS INCORPORATED
- 申请人地址： 13500 North Central Expressway Dallas Texas 75265 US
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： 13500 North Central Expressway Dallas Texas 75265 US
- 代理机构： Schwepfinger, Karl-Heinz, Dipl.-Ing.
- 优先权： US224914 19940408
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/78
摘要：
A high voltage PMOS transistor 7 has improved on resistance by adjusting impurity concentration in a lightly doped drift region rim 48 to compensate for impurity segregation which occurs during the growth phase of a thick field oxide 43. During fabrication of high voltage PMOS device 7, a shallow vertical junction 230 formed by impurity segregation into field oxide 43. Implanting an HV drift region p-tank rim adjustment 220 and annealing it forms a lateral junction 250 and isolates the shallow junction 230 under field oxide 43. Thereby, the on-resistance of high voltage PMOS transistor 7 is minimized.
公开/授权文献
- EP0676799B1 Extended drain resurf lateral DMOS devices 公开/授权日：2001-12-05
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