A bi-stable memory element (1) comprises a base contact (3), and a bridging contact (8), both made from an electrically conductive material. The bridging contact (8) is dimensioned so as to have two stable positions, in one of which the bridging contact (8) is in contact with the base contact (3), and in the other of which the bridging contact (8) is spaced apart from the base contact (3). Deflection means (4, 5) deflects the bridging contact (8) from one stable position to the other.