发明公开
- 专利标题： IONEN IMPLANTIERUNGSGERÄT
- 专利标题（中）： IONENIMPLANTIERUNGSGERÄT
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申请号： EP94924392.7申请日： 1994-08-19
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公开(公告)号： EP0722181A1公开(公告)日： 1996-07-17
- 发明人: OHMI, Tadahiro , TOMITA, Kazuo, Dept. Elect. Faculty of Engineering
- 申请人： OHMI, Tadahiro
- 申请人地址： 1-17-301, Komegabukuro 2-chome Sendai-shi Miyagi-ken 980 JP
- 专利权人： OHMI, Tadahiro
- 当前专利权人： OHMI, Tadahiro
- 当前专利权人地址： 1-17-301, Komegabukuro 2-chome Sendai-shi Miyagi-ken 980 JP
- 代理机构： Weitzel, Wolfgang, Dr.-Ing. Patentanwalt
- 优先权： JP206742/93 19930820
- 国际公布： WO9506953 19950309
- 主分类号： H01J37/317
- IPC分类号： H01J37/317 ; H01L21/265
摘要：
An object of the present invention is to provide an ion implanter in which contamination of metallic impurities is reduced.
The ion implanter for introducing specified impurities into said semiconductor substrate by irradiating an ion beam accelerated against the semiconductor substrate is characterized in that a portion of a member positioned at a place backward from said semiconductor substrate and irradiated by the ion beam when viewed from a direction in which the ion beam advanced is made of semiconductor constituting said semiconductor substrate or a material containing at least an oxide or a nitride thereof as a main ingredient, or the surface thereof is covered with said material.
Also the ion implanter is characterized in that a member positioned at a place backward from said semiconductor substrate, when viewed from a direction in which the ion beam advances, is not irradiated by said ion beam.
The ion implanter for introducing specified impurities into said semiconductor substrate by irradiating an ion beam accelerated against the semiconductor substrate is characterized in that a portion of a member positioned at a place backward from said semiconductor substrate and irradiated by the ion beam when viewed from a direction in which the ion beam advanced is made of semiconductor constituting said semiconductor substrate or a material containing at least an oxide or a nitride thereof as a main ingredient, or the surface thereof is covered with said material.
Also the ion implanter is characterized in that a member positioned at a place backward from said semiconductor substrate, when viewed from a direction in which the ion beam advances, is not irradiated by said ion beam.
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