发明公开
- 专利标题： Semiconductor device having reflecting layer
- 专利标题（中）： 具有反射层的半导体器件
-
申请号： EP96104419.5申请日： 1991-10-31
-
公开(公告)号： EP0724300A2公开(公告)日： 1996-07-31
- 发明人: Yamauchi, Norikatsu , Saka, Takashi , Hirotani, Masumi , Kato, Toshihiro , Susawa, Hiromoto
- 申请人： Yamauchi, Norikatsu , DAIDO TOKUSHUKO KABUSHIKI KAISHA
- 申请人地址： 508, Wakata 2-chome, Midori-ku Nagoya-shi, Aichi-ken JP
- 专利权人： Yamauchi, Norikatsu,DAIDO TOKUSHUKO KABUSHIKI KAISHA
- 当前专利权人： Yamauchi, Norikatsu,DAIDO TOKUSHUKO KABUSHIKI KAISHA
- 当前专利权人地址： 508, Wakata 2-chome, Midori-ku Nagoya-shi, Aichi-ken JP
- 代理机构： Bühling, Gerhard, Dipl.-Chem.
- 优先权： JP298415/90 19901102; JP301395/90 19901107; JP45975/91 19910219; JP87602/91 19910326; JP125139/91 19910426; JP216146/91 19910731
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
The present invention provides a semiconductor surface emitting diode having a reflecting layer formed of different semiconductor materials for reflecting incident light to optical wave interference, an active layer formed by epitaxy for producing said incident light, and a light-emitting surface through which light produced by the active layer is emitted.
The reflective layer includes semiconductor films having different compositions superposed on each other, and the composition of said reflective layer changes continuously or in steps, in the direction of the thickness of said reflecting layer, at least at each interphase between the adjacent semiconductor films.
The reflective layer includes semiconductor films having different compositions superposed on each other, and the composition of said reflective layer changes continuously or in steps, in the direction of the thickness of said reflecting layer, at least at each interphase between the adjacent semiconductor films.
公开/授权文献
- EP0724300B1 Semiconductor device having reflecting layer 公开/授权日：2001-10-10
信息查询
IPC分类:
