发明授权
EP0756328B1 Non-volatile two transistor memory cell having one single polysilicon gate
失效
与单个多晶硅栅的非易失性双晶体管存储单元
- 专利标题: Non-volatile two transistor memory cell having one single polysilicon gate
- 专利标题(中): 与单个多晶硅栅的非易失性双晶体管存储单元
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申请号: EP96111565.6申请日: 1996-07-18
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公开(公告)号: EP0756328B1公开(公告)日: 2003-01-15
- 发明人: Parris, Patrice M. , See, Yee-Chaung
- 申请人: MOTOROLA, INC.
- 申请人地址: 1303 East Algonquin Road Schaumburg, IL 60196 US
- 专利权人: MOTOROLA, INC.
- 当前专利权人: MOTOROLA, INC.
- 当前专利权人地址: 1303 East Algonquin Road Schaumburg, IL 60196 US
- 代理机构: Gibson, Sarah Jane
- 优先权: US506989 19950728
- 主分类号: H01L27/115
- IPC分类号: H01L27/115
公开/授权文献
- EP0756328A3 Non-volatile memory cell having a single polysilicon gate 公开/授权日:1997-07-16
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