发明授权
EP0756328B1 Non-volatile two transistor memory cell having one single polysilicon gate 失效
与单个多晶硅栅的非易失性双晶体管存储单元

  • 专利标题: Non-volatile two transistor memory cell having one single polysilicon gate
  • 专利标题(中): 与单个多晶硅栅的非易失性双晶体管存储单元
  • 申请号: EP96111565.6
    申请日: 1996-07-18
  • 公开(公告)号: EP0756328B1
    公开(公告)日: 2003-01-15
  • 发明人: Parris, Patrice M.See, Yee-Chaung
  • 申请人: MOTOROLA, INC.
  • 申请人地址: 1303 East Algonquin Road Schaumburg, IL 60196 US
  • 专利权人: MOTOROLA, INC.
  • 当前专利权人: MOTOROLA, INC.
  • 当前专利权人地址: 1303 East Algonquin Road Schaumburg, IL 60196 US
  • 代理机构: Gibson, Sarah Jane
  • 优先权: US506989 19950728
  • 主分类号: H01L27/115
  • IPC分类号: H01L27/115
Non-volatile two transistor memory cell having one single polysilicon gate
公开/授权文献
信息查询
0/0