发明公开
- 专利标题： Molecular beam epitaxy process with growing layer thickness control
- 专利标题（中）： 分子束外延与生长的厚度控制
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申请号： EP96101335.6申请日： 1996-01-31
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公开(公告)号： EP0768707A3公开(公告)日： 1999-01-27
- 发明人: Celii, Francis G. , Kao, Yung-Chung , Katz, Alan J. , Moise, Theodore S.
- 申请人： TEXAS INSTRUMENTS INCORPORATED
- 申请人地址： 13500 North Central Expressway Dallas Texas 75265 US
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： 13500 North Central Expressway Dallas Texas 75265 US
- 代理机构： Schwepfinger, Karl-Heinz, Dipl.-Ing.
- 优先权： US382324 19950201
- 主分类号： H01L21/203
- IPC分类号： H01L21/203 ; C30B23/02 ; C30B29/40 ; H01L29/88
摘要：
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of mass spectrometer (204) signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
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