发明公开
EP0791959A1 Method of connecting a dram trench capacitor
失效
KontaktierverfahrenfürDRAM-Grabenkondensator
- 专利标题： Method of connecting a dram trench capacitor
- 专利标题（中）： KontaktierverfahrenfürDRAM-Grabenkondensator
-
申请号： EP97102361.9申请日： 1997-02-13
-
公开(公告)号： EP0791959A1公开(公告)日： 1997-08-27
- 发明人: Stengl, Reinhard J. , Hammerl, Erwin , Mandelman, Jack A. , Ho, Herbert L. , Srinivasan, Radhika , Short, Alvin P.
- 申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
- 申请人地址： Wittelsbacherplatz 2 80333 München DE
- 专利权人： SIEMENS AKTIENGESELLSCHAFT,International Business Machines Corporation
- 当前专利权人： SIEMENS AKTIENGESELLSCHAFT,International Business Machines Corporation
- 当前专利权人地址： Wittelsbacherplatz 2 80333 München DE
- 代理机构： Fuchs, Franz-Josef, Dr.-Ing.
- 优先权： US605622 19960222
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
In a method for making an electrical connection between a trench storage capacitor and an access transistor in a DRAM cell, the electrical connection (90) is formed through the selectively controlled outdiffusion of either N-type or P-type dopants present in the trench through a single crystalline semiconducting material (60) which is grown by epitaxy (epi) from the trench sidewall. This epitaxially grown single crystalline layer acts as a barrier to excessive dopant outdiffusion which can occur in the processing of conventional DRAMs.
公开/授权文献
- EP0791959B1 Method of connecting a dram trench capacitor 公开/授权日：2001-07-04
信息查询
IPC分类:
