A first metallic layer (16) is deposited over the substrate (10) and the contact well (14) formed therein. The first metallic layer (16) is then exposed to a gas to allow the gas to stuff the first metallic layer, thereby improving the barrier characteristics of the first metallic layer. A second metallic layer (22) is deposited over the first stuffed metallic layer (16). A third metallic layer (24) is then deposited over the second metallic layer. An anti-reflective fourth layer of metal (26) is then deposited over the third metallic layer (24). The exposure of the first metallic layer (16) to a gas and all of the metal layer deposition steps are performed in a low-pressure environment. Also, as an result of subsequent processing steps required in the formation of semiconductor devices, the portions of the first metallic layer which are present outside of the contact well are removed. The remaining portion of the first metallic layer forms a self-aligned silicide within the contact well.