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发明公开
EP0813246A3 Semiconductor device comprising two semiconductor substrates 失效
Halbleiteranordnung mit zwei Halbleitersubstraten

Semiconductor device comprising two semiconductor substrates
摘要：
A first electrode and a first insulating layer of electrode insulation are formed on a first semiconductor substrate. A second electrode and a second insulating layer of electrode insulation are formed on a second semiconductor substrate. The first semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement. Likewise, the second semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement, wherein the pattern of the second semiconductor substrate has a phase shift of 180 degrees with respect to the pattern of the first semiconductor substrate. The first and second semiconductor substrates are bonded together with their patterns in engagement.
摘要（中）：

在第一半导体衬底上形成电极绝缘体的第一电极和第一绝缘层。 第二电极和第二电极绝缘层形成在第二半导体衬底上。 第一半导体衬底在其表面上以条纹布置以规则的间隔在其表面处具有凹槽/突起的图案（即，横截面的锯齿形图案）。 类似地，第二半导体衬底在其表面上以条纹布置以规则的间隔在其表面处具有凹槽/突起的图案（即，横截面的锯齿形图案），其中第二半导体衬底的图案具有180度的相移， 相对于第一半导体衬底的图案。 第一和第二半导体衬底以它们的图案接合在一起。

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