发明公开
- 专利标题： Improved restore function for memory cells using negative bitline-selection
- 专利标题（中）： 改进了对使用负位线的存储单元恢复
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申请号： EP97114042.1申请日： 1997-08-14
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公开(公告)号： EP0825612A2公开(公告)日： 1998-02-25
- 发明人: Buettner, Stefan , Pille, Jürgen , Wendel, Dieter , Wernicke, Friedrich
- 申请人： International Business Machines Corporation
- 申请人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： Old Orchard Road Armonk, N.Y. 10504 US
- 代理机构： Teufel, Fritz, Dipl.-Phys.
- 优先权： DE19632780 19960815
- 主分类号： G11C11/419
- IPC分类号： G11C11/419
摘要：
A new method is indicated for the restore of bitlines and datalines from memory-cells. All bit- and datalines are switched together during the restore activity so that all restore-FETs can be prepared with the necessary re-charging current. The non-addressed bitlines are then switched off through their bitswitches. In this manner, the dimensions of the re-charging devices can be considerably reduced.
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