发明授权
EP0843901B1 ELECTRICALLY ERASABLE, DIRECTLY OVERWRITABLE, MULTIBIT SINGLE CELL MEMORY ELEMENTS AND ARRAYS FABRICATED THEREFROM
失效
电可擦除可擦写立即多关单细胞和现有的内存记忆由此制成MATRIX
- 专利标题： ELECTRICALLY ERASABLE, DIRECTLY OVERWRITABLE, MULTIBIT SINGLE CELL MEMORY ELEMENTS AND ARRAYS FABRICATED THEREFROM
- 专利标题（中）： 电可擦除可擦写立即多关单细胞和现有的内存记忆由此制成MATRIX
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申请号： EP96924647.9申请日： 1996-07-19
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公开(公告)号： EP0843901B1公开(公告)日： 2004-12-08
- 发明人: KLERSY, Patrick, J. , STRAND, David, A. , OVSHINSKY, Stanford, R.
- 申请人： ENERGY CONVERSION DEVICES, INC.
- 申请人地址： 1675 West Maple Road Troy Michigan 48084 US
- 专利权人： ENERGY CONVERSION DEVICES, INC.
- 当前专利权人： ENERGY CONVERSION DEVICES, INC.
- 当前专利权人地址： 1675 West Maple Road Troy Michigan 48084 US
- 代理机构： Kügele, Bernhard
- 优先权： US506630 19950725
- 国际公布： WO1997005665 19970213
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
An electrically operated memory element (30) includes a volume of memory material (36) characterized by: a large dynamic range of electrical resistance values; and the ability of at least a filamentary portion to be set, by the selected electrical signal to any resistance value in the dynamic range, regardless of the previous resistance value of the material so as to provide a single cell with multibit storage capabilities. The memory element (30) also includes a pair of contacts (6, 8) including 1) a thin-film layer (34, 38), preferably titanium carbonitride or titanium siliconitride, disposed adjacent to the memory material (36), used as a diffusion barrier to inhibit foreign material from entering the memory material (36), and 2) a thin-film layer (32, 40), preferably a Ti-W alloy, disposed remote to the memory material, used to provide a barrier to aluminum electromigration, diffusion and providing an ohmic contact at the aluminum interface.
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