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EP0851505A2 semiconductor device having a high voltage termination structure with buried field-shaping region 失效
Halbleiteranordnung mit Hochspannungsrandsruktur mit vergrabenem Feldformungsgebiet

semiconductor device having a high voltage termination structure with buried field-shaping region
摘要：
A semiconductor device structure and method are presented for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region. The structure includes a region of second conductivity type in the substrate completely buried in the substrate below and separated from the device region. The region of second conductivity type is located a predetermined distance away from the device region. The distance is sufficient to permit a depletion region to form between the region of second conductivity type and the device region, when a first voltage is applied between the device region and the substrate. The distance also is determined to produce a radius of curvature of the depletion region, when a second voltage that is larger than the first voltage is applied between the device region and the substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if the region of second conductivity type were not present. Traditional field shaping regions spaced from the device region at a surface of the substrate and spaced from the region of second conductivity type may be used in conjunction with the buried ring, if desired..
摘要（中）：

提出了一种用于增加第一导电类型的衬底（92,94）与器件区域（96）之间的结的击穿电压的半导体器件结构（90,90'）和方法。 该结构包括在衬底中完全埋入衬底中的第二导电类型（104）的区域，并且与器件区域分离。 第二导电类型的区域位于远离装置区域的预定距离处。 当在器件区域和衬底之间施加第一电压（108）时，该距离足以允许在第二导电类型的区域和器件区域之间形成耗尽区域（106）。 当在器件区域和衬底之间施加大于第一电压的第二电压（108'）时，确定该距离以产生耗尽区的曲率半径（110,110'），该第二电压（108'）大于 如果不存在第二导电类型的区域，则围绕将形成的器件区域的耗尽区的曲率半径。 如果需要，可以与掩埋环一起使用与衬底的表面处的器件区域间隔开并与第二导电类型的区域隔开的传统场成形区域（115）。

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