发明公开
- 专利标题: Photovoltiac device and process for production of a zinc oxide thin film
- 专利标题(中): 一种光电器件和生产的氧化锌膜的
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申请号: EP98113939.7申请日: 1998-07-24
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公开(公告)号: EP0893833A2公开(公告)日: 1999-01-27
- 发明人: Sano, Masafumi
- 申请人: CANON KABUSHIKI KAISHA
- 申请人地址: 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo JP
- 专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人地址: 30-2, 3-chome, Shimomaruko, Ohta-ku Tokyo JP
- 代理机构: Bühling, Gerhard, Dipl.-Chem.
- 优先权: JP200122/97 19970725
- 主分类号: H01L31/0224
- IPC分类号: H01L31/0224 ; H01L31/18 ; C25D9/08
摘要:
A photovoltaic device is provided which comprises a back reflection layer, a zinc oxide layer and a semiconductor layer stacked in this order on a substrate, wherein the zinc oxide layer contains a carbohydrate. The content of the carbohydrate is preferably in the range of from 1 µg/cm 3 to 100 mg/cm 3 . Thereby, the zinc oxide layer can be formed without abnormal growth to have a rough surface to achieve sufficient optical confinement effect, and the photovoltaic device is improved in the durability and the photoelectric conversion efficiency.
公开/授权文献
- EP0893833B1 Process of producing a zinc oxide thin film 公开/授权日:2003-05-21
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