发明公开
EP0910117A3 Methods for protecting device components from chemical mechanical polish induced defects
失效
保护设备部件免受化学机械抛光引起的缺陷的方法
- 专利标题： Methods for protecting device components from chemical mechanical polish induced defects
- 专利标题（中）： 保护设备部件免受化学机械抛光引起的缺陷的方法
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申请号： EP98305084.0申请日： 1998-06-26
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公开(公告)号： EP0910117A3公开(公告)日： 1999-06-02
- 发明人: Levy, Max G. , Fiegl, Bernhard , Bergner, Wolfgang , Goth, George R. , Parries, Paul , Sendelbach, Matthew J. , Wang, Ting-Hao , Wille, William C. , Wittmann, Juergen
- 申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
- 申请人地址： Wittelsbacherplatz 2 80333 München DE
- 专利权人： SIEMENS AKTIENGESELLSCHAFT,International Business Machines Corporation
- 当前专利权人： SIEMENS AKTIENGESELLSCHAFT,International Business Machines Corporation
- 当前专利权人地址： Wittelsbacherplatz 2 80333 München DE
- 代理机构： Litchfield, Laura Marie
- 优先权： US884120 19970627
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105
摘要：
A method for preventing CMP-induced (chemical-mechanical polish) damage to a substrate disposed below a pad nitride layer of a mesa. The pad nitride layer is disposed below a conformally deposited dielectric layer. The dielectric layer is disposed below a conformally deposited polysilicon layer. The method includes planarizing the polysilicon layer down to at least a surface of the dielectric layer using the CMP to expose a first region of the dielectric layer. The method further includes etching partially through the first region of the dielectric layer using first etch parameters. The first etch parameters include an etchant source gas that is substantially selective to the pad nitride layer to prevent the pad nitride layer from being etched through even in the presence of a CMP defect. Additionally, there is also included removing the polysilicon layer after the etching partially through the first region of the dielectric layer.
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