Invention Grant
- Patent Title: Semiconductor circuit in which distortion caused by changes in ambient temperature is compensated
- Patent Title (中): 半导体电路具有用于补偿失真由于环境温度的变化
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Application No.: EP98122434.8Application Date: 1998-11-26
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Publication No.: EP0920123B1Publication Date: 2006-11-02
- Inventor: Kakuta, Yuji, c/o NEC Corporation , Fukasawa, Yoshiaki, c/o NEC Corporation , Taguchi, Yuichi, c/o NEC Engineering, Ltd.
- Applicant: NEC Electronics Corporation
- Applicant Address: 1753 Shimonumabe Nakahara-ku Kawasaki, Kanagawa 211-8668 JP
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: 1753 Shimonumabe Nakahara-ku Kawasaki, Kanagawa 211-8668 JP
- Agency: Betten & Resch
- Priority: JP32644497 19971127
- Main IPC: H03F1/30
- IPC: H03F1/30
Public/Granted literature
- EP0920123A3 Semiconductor circuit in which distortion caused by changes in ambient temperature is compensated Public/Granted day:2001-10-17
Information query
