发明公开
EP0935286A1 COPPER CIRCUIT JUNCTION SUBSTRATE AND METHOD OF PRODUCING THE SAME
失效
KETFER-SCHALTUNGSVERBINDUNGSSUBSTRAT UND SEINE HERSTELLUNG
- 专利标题: COPPER CIRCUIT JUNCTION SUBSTRATE AND METHOD OF PRODUCING THE SAME
- 专利标题(中): KETFER-SCHALTUNGSVERBINDUNGSSUBSTRAT UND SEINE HERSTELLUNG
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申请号: EP98921813.6申请日: 1998-05-26
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公开(公告)号: EP0935286A1公开(公告)日: 1999-08-11
- 发明人: SASAKI,Kazutaka, Itami Works,Sumitomo Elec.Ind.Ltd , NAKATA,Hirohiko, Itami Works,Sumitomo Elec.Ind.Ltd
- 申请人: Sumitomo Electric Industries, Ltd.
- 申请人地址: 5-33, Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: 5-33, Kitahama 4-chome Chuo-ku Osaka-shi, Osaka 541-0041 JP
- 代理机构: Rackham, Stephen Neil
- 优先权: JP13491297 19970526; JP26257397 19970929; JP6637098 19980317
- 国际公布: WO9854761 19981203
- 主分类号: H01L23/12
- IPC分类号: H01L23/12 ; H05K1/09
摘要:
A highly reliable copper circuit-joined board that, in mounting a semiconductor element, a lead frame or the like on a ceramic substrate, enables the semiconductor element, the lead frame or the like to be strongly joined to the substrate without breaking or deformation of the substrate found in conventional joining methods, such as brazing and joining using a copper/copper oxide eutectic crystal.
Any one of an interposing layer comprising a brazing material layer comprising silver and/or copper as a main component and an active metal or an interposing layer having a two-layer structure comprising a first interposing layer comprising the brazing material layer or a high-melting metallizing layer and a second interposing layer, having a melting point of 1,000°C or below, comprising Ni, Fe, or Cu as a main component in that order from the substrate side, is formed on a ceramic substrate, and a conductor layer, comprising copper as a main component, which, in both the lengthwise and widthwise directions, is at least 0.05 mm shorter than the interposing layer, is formed on the interposing layer to prepare a copper circuit-joined board.
The copper circuit-joined board may comprise the base board having thereon an outer layer comprising Ni as a main component. A semiconductor element is mounted on the copper circuit-joined board to prepare a semiconductor device.
Any one of an interposing layer comprising a brazing material layer comprising silver and/or copper as a main component and an active metal or an interposing layer having a two-layer structure comprising a first interposing layer comprising the brazing material layer or a high-melting metallizing layer and a second interposing layer, having a melting point of 1,000°C or below, comprising Ni, Fe, or Cu as a main component in that order from the substrate side, is formed on a ceramic substrate, and a conductor layer, comprising copper as a main component, which, in both the lengthwise and widthwise directions, is at least 0.05 mm shorter than the interposing layer, is formed on the interposing layer to prepare a copper circuit-joined board.
The copper circuit-joined board may comprise the base board having thereon an outer layer comprising Ni as a main component. A semiconductor element is mounted on the copper circuit-joined board to prepare a semiconductor device.
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