发明授权
- 专利标题: A method for producing a single-crystalline film
- 专利标题(中): 一种用于制备单晶层的方法
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申请号: EP99304143.3申请日: 1999-05-27
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公开(公告)号: EP0962558B1公开(公告)日: 2004-08-25
- 发明人: Imaeda, Minoru , Yoshino, Takashi
- 申请人: NGK INSULATORS, LTD.
- 申请人地址: 2-56 Suda-cho, Mizuho-ku Nagoya-City, Aichi Prefecture 467-8530 JP
- 专利权人: NGK INSULATORS, LTD.
- 当前专利权人: NGK INSULATORS, LTD.
- 当前专利权人地址: 2-56 Suda-cho, Mizuho-ku Nagoya-City, Aichi Prefecture 467-8530 JP
- 代理机构: Paget, Hugh Charles Edward
- 优先权: JP14561398 19980527
- 主分类号: C30B23/02
- IPC分类号: C30B23/02 ; C30B29/30 ; G02F1/37
摘要:
A method for producing a single-crystalline film made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, comprising the steps of preparing a target made of a material for the single-crystalline film, preparing a foundation made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, irradiating upon the target, thereby gasifying molecules constituting the target by dissociation and evaporation thereof, and epitaxially growing the single-crystalline film on the foundation.
公开/授权文献
- EP0962558A1 A method for producing a single-crystalline film 公开/授权日:1999-12-08
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