发明公开
- 专利标题： ESD protection thyristor with trigger diode
- 专利标题（中）： ESD-Schutz晶闸管触发二极管
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申请号： EP99306769.3申请日： 1999-08-25
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公开(公告)号： EP0982776A2公开(公告)日： 2000-03-01
- 发明人: Kawazoe, Hidechika , Aoki, Eiji , Hsu, Sheng Teng , Fujii, Katsumasa
- 申请人： SHARP KABUSHIKI KAISHA
- 申请人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545-8522 JP
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545-8522 JP
- 代理机构： Brown, Kenneth Richard
- 优先权： JP23917098 19980825; JP23095599 19990817
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L29/74
摘要：
An electrostatic discharge protection device according to the present invention is provided at an input or an output of a semiconductor integrated circuit for protecting an internal circuit of the semiconductor integrated circuit from an electrostatic surge flowing into or out of the semiconductor integrated circuit. The electrostatic discharge protection device includes: a thyristor; and a trigger diode for triggering the thyristor with a low voltage. The trigger diode includes: an n-type cathode high impurity concentration region; a p-type anode high impurity concentration region; and an insulator section for electrically insulating a silicide layer formed on a surface of the n-type cathode high impurity concentration region from another silicide layer formed on a surface of the p-type anode high impurity concentration region.
公开/授权文献
- EP0982776B1 ESD protection thyristor with trigger diode 公开/授权日：2008-04-16
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