发明公开
- 专利标题： DRAM trench capacitor
- 专利标题（中）： Methode zur Herstellung eines DRAM-Graben-Kondensators
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申请号： EP99113439.6申请日： 1999-07-10
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公开(公告)号： EP0987765A2公开(公告)日： 2000-03-22
- 发明人: Jammy, Rajarao , Mandelman, Jack A. , Radens, Carl J.
- 申请人： International Business Machines Corporation
- 申请人地址： New Orchard Road Armonk, NY 10504 US
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： New Orchard Road Armonk, NY 10504 US
- 代理机构： Rach, Werner, Dr.
- 优先权： US152835 19980914
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L21/8242
摘要：
The present invention relates to a process of fabricating semiconductor memory structures, particularly deep trench semiconductor memory devices wherein a temperature sensitive high dielectric constant material is incorporated into the storage node of the capacitor. Specifically, the present invention describes a process for forming deep trench storage capacitors after high temperature shallow trench isolation and gate conductor processing. This process allows for the incorporation of a temperature sensitive high dielectric constant material into the capacitor structure without causing decomposition of that material. Furthermore, the process of the present invention limits the extent of the buried- strap outdiffusion, thus improving the electrical characteristics of the array MOSFET.
公开/授权文献
- EP0987765A3 DRAM trench capacitor 公开/授权日：2000-11-29
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