发明公开
- 专利标题： A liquid crystal display device and a method of manufacture thereof, and a substrate with alignment layer and a method of manufacture thereof
- 专利标题（中）： 液晶显示装置及其制造方法，和与取向层的基板及其制造方法
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申请号： EP99308238.7申请日： 1999-10-19
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公开(公告)号： EP0996028A2公开(公告)日： 2000-04-26
- 发明人: Acosta, Elizabeth Jane , Tillin, Martin David , Towler, Michael John , Walton, Harry Garth
- 申请人： SHARP KABUSHIKI KAISHA
- 申请人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545-8522 JP
- 专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人： SHARP KABUSHIKI KAISHA
- 当前专利权人地址： 22-22 Nagaike-cho Abeno-ku Osaka 545-8522 JP
- 代理机构： Suckling, Andrew Michael
- 优先权： GB9822762 19981020
- 主分类号： G02F1/1337
- IPC分类号： G02F1/1337 ; G02F1/139
摘要：
An OCB device comprises upper and lower substrates (1, 1'), each provided with an alignment layer (2,2'). A liquid crystal layer (3) is provided between the substrates.
The lower substrate (1') has a low pre-tilt in regions A and C, so that an H-state is stable in these regions when no voltage is applied across the liquid crystal layer. Region B has a high pre-tilt on the lower substrate 1', so that a HAN state is stable in region B under zero applied voltage.
When a voltage is applied across the liquid crystal layer (3) a V-state is formed at the interface between the HAN-state and the H-states. This V-state then displaces the H-states in regions A and C.
The high pre-tilt region, region B, is acting as a nucleation region. The V-state forms at a lower applied voltage than if the nucleation region is not provided.
The lower substrate (1') has a low pre-tilt in regions A and C, so that an H-state is stable in these regions when no voltage is applied across the liquid crystal layer. Region B has a high pre-tilt on the lower substrate 1', so that a HAN state is stable in region B under zero applied voltage.
When a voltage is applied across the liquid crystal layer (3) a V-state is formed at the interface between the HAN-state and the H-states. This V-state then displaces the H-states in regions A and C.
The high pre-tilt region, region B, is acting as a nucleation region. The V-state forms at a lower applied voltage than if the nucleation region is not provided.
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